Integration of fluorographene trapping medium in MoS₂-based nonvolatile memory device

• المؤلفون الرئيسيون: Chang, Kai Ping, Abushammala, Haneen, Sahoo, Mamina, Jaffre, Alexandre, Alamarguy, David, Jiang, Yu, Boutchich. Mohamed, Lai, Chao-Sung
• مؤلفون آخرون: Research Techno Plaza
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Charge Trapping; Electronic Properties; Nonvolatile Memory
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/148926

Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been widely investigated for their tuneable electronic properties. There is a large spectrum of applications of such 2D analogs; for example, non-volatile memory, which is a key building block for future low-power consumer...