Comparative investigation of Si device with WBG devices

Power electronic systems have been in the society few decades. In the year 1970s, MOSFETs, which is Metal–Oxide–Semiconductor Field-Effect Transistors, significantly allowed designs of compact high-efficiency systems, mainly due to the tremendously improved power gain.

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Bibliographic Details
Main Author:	Tan, Chin Ang
Other Authors:	Wong Kin Shun, Terence
Format:	Final Year Project
Language:	English
Published:	Nanyang Technological University 2021
Subjects:	Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/149431
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-149431
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spelling	sg-ntu-dr.10356-1494312023-07-07T18:14:41Z Comparative investigation of Si device with WBG devices Tan, Chin Ang Wong Kin Shun, Terence School of Electrical and Electronic Engineering EKSWONG@ntu.edu.sg Engineering::Electrical and electronic engineering Power electronic systems have been in the society few decades. In the year 1970s, MOSFETs, which is Metal–Oxide–Semiconductor Field-Effect Transistors, significantly allowed designs of compact high-efficiency systems, mainly due to the tremendously improved power gain. Bachelor of Engineering (Electrical and Electronic Engineering) 2021-05-31T07:02:30Z 2021-05-31T07:02:30Z 2021 Final Year Project (FYP) Tan, C. A. (2021). Comparative investigation of Si device with WBG devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/149431 https://hdl.handle.net/10356/149431 en B2246-201 application/pdf Nanyang Technological University
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	Engineering::Electrical and electronic engineering
spellingShingle	Engineering::Electrical and electronic engineering Tan, Chin Ang Comparative investigation of Si device with WBG devices
description	Power electronic systems have been in the society few decades. In the year 1970s, MOSFETs, which is Metal–Oxide–Semiconductor Field-Effect Transistors, significantly allowed designs of compact high-efficiency systems, mainly due to the tremendously improved power gain.
author2	Wong Kin Shun, Terence
author_facet	Wong Kin Shun, Terence Tan, Chin Ang
format	Final Year Project
author	Tan, Chin Ang
author_sort	Tan, Chin Ang
title	Comparative investigation of Si device with WBG devices
title_short	Comparative investigation of Si device with WBG devices
title_full	Comparative investigation of Si device with WBG devices
title_fullStr	Comparative investigation of Si device with WBG devices
title_full_unstemmed	Comparative investigation of Si device with WBG devices
title_sort	comparative investigation of si device with wbg devices
publisher	Nanyang Technological University
publishDate	2021
url	https://hdl.handle.net/10356/149431
_version_	1772828665521897472

Comparative investigation of Si device with WBG devices

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