Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs

• Main Author: Wang, Shuang
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/14958
• Institution: Nanyang Technological University

Negative Bias Temperature Instability (NBTI) is a critical reliability issue of metal-oxide-semiconductor field effect transistors (MOSFETs) due to imperfections located at the oxide-semiconductor interface. According to the conventional NBTI model, interface traps are generated at the Si-SiO2 inter...