Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs

• المؤلف الرئيسي: Wang, Shuang
• مؤلفون آخرون: Ang Diing Shenp
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/14958
• المؤسسة: Nanyang Technological University

Negative Bias Temperature Instability (NBTI) is a critical reliability issue of metal-oxide-semiconductor field effect transistors (MOSFETs) due to imperfections located at the oxide-semiconductor interface. According to the conventional NBTI model, interface traps are generated at the Si-SiO2 inter...