Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs
Negative Bias Temperature Instability (NBTI) is a critical reliability issue of metal-oxide-semiconductor field effect transistors (MOSFETs) due to imperfections located at the oxide-semiconductor interface. According to the conventional NBTI model, interface traps are generated at the Si-SiO2 inter...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2009
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| 在線閱讀: | https://hdl.handle.net/10356/14958 |
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| 機構: | Nanyang Technological University |
| 語言: | English |