Design and analysis of RF low noise amplifier
This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) using a Field Effect Transistor (FET) at an operating frequency of 2.4 GHz. To provide a clearer understanding of the entire design procedure, design theories and formulas were also explained in detail...
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| 主要作者: | |
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| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
Nanyang Technological University
2021
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/149905 |
| 標簽: |
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| 機構: | Nanyang Technological University |
| 語言: | English |