Design and analysis of RF low noise amplifier

This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) using a Field Effect Transistor (FET) at an operating frequency of 2.4 GHz. To provide a clearer understanding of the entire design procedure, design theories and formulas were also explained in detail...

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Bibliographic Details
Main Author: Tan, Sean
Other Authors: Tan Eng Leong
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2021
Subjects:
Online Access:https://hdl.handle.net/10356/149905
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1499052023-07-07T18:28:53Z Design and analysis of RF low noise amplifier Tan, Sean Tan Eng Leong School of Electrical and Electronic Engineering EELTan@ntu.edu.sg Engineering::Electrical and electronic engineering::Electronic circuits This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) using a Field Effect Transistor (FET) at an operating frequency of 2.4 GHz. To provide a clearer understanding of the entire design procedure, design theories and formulas were also explained in detail throughout this paper. The goal of this project is to achieve desirable performance on various parameters such as stability factor, gain, noise figure as well as input and output reflection coefficient. The design and simulation for most part of this project is done through the Advanced Design System (ADS) software and the simulated result of the completed LNA circuit showed that all requirements that were set beforehand were met. Bachelor of Engineering (Electrical and Electronic Engineering) 2021-06-10T08:36:01Z 2021-06-10T08:36:01Z 2021 Final Year Project (FYP) Tan, S. (2021). Design and analysis of RF low noise amplifier. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/149905 https://hdl.handle.net/10356/149905 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle Engineering::Electrical and electronic engineering::Electronic circuits
Tan, Sean
Design and analysis of RF low noise amplifier
description This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) using a Field Effect Transistor (FET) at an operating frequency of 2.4 GHz. To provide a clearer understanding of the entire design procedure, design theories and formulas were also explained in detail throughout this paper. The goal of this project is to achieve desirable performance on various parameters such as stability factor, gain, noise figure as well as input and output reflection coefficient. The design and simulation for most part of this project is done through the Advanced Design System (ADS) software and the simulated result of the completed LNA circuit showed that all requirements that were set beforehand were met.
author2 Tan Eng Leong
author_facet Tan Eng Leong
Tan, Sean
format Final Year Project
author Tan, Sean
author_sort Tan, Sean
title Design and analysis of RF low noise amplifier
title_short Design and analysis of RF low noise amplifier
title_full Design and analysis of RF low noise amplifier
title_fullStr Design and analysis of RF low noise amplifier
title_full_unstemmed Design and analysis of RF low noise amplifier
title_sort design and analysis of rf low noise amplifier
publisher Nanyang Technological University
publishDate 2021
url https://hdl.handle.net/10356/149905
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