Formation of germanium (Ge) – based waveguides for infrared application

Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts...

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書目詳細資料
主要作者: Zhong, Jian
其他作者: Li King Ho Holden
格式: Final Year Project
語言:English
出版: Nanyang Technological University 2021
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在線閱讀:https://hdl.handle.net/10356/150361
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