Formation of germanium (Ge) – based waveguides for infrared application
Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/150361 |
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| Institution: | Nanyang Technological University |
| Language: | English |
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