Monolithic Germanium-tin pedestal waveguide for mid-infrared applications

Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin GeSn has been reported for use in a direct-band gap...

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Main Authors: Goh, Simon Chun Kiat, Shiau, Li Lynn, Zhang, Lin, Son, Bongkwon, Chen, Qimiao, Zhong, Jian, Salim, Teddy, Tan, Chuan Seng
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2021
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在線閱讀:https://hdl.handle.net/10356/146749
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機構: Nanyang Technological University
語言: English