Monolithic Germanium-tin pedestal waveguide for mid-infrared applications

• المؤلفون الرئيسيون: Goh, Simon Chun Kiat, Shiau, Li Lynn, Zhang, Lin, Son, Bongkwon, Chen, Qimiao, Zhong, Jian, Salim, Teddy, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Group IV; Photonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/146749
• المؤسسة: Nanyang Technological University

Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin GeSn has been reported for use in a direct-band gap...