High-performance GE/GESN photodetectors in near- and mid-infrared range

High-performance GE/GESN photodetectors in near- and mid-infrared range

Demand for Near- (NIR) and Mid-infrared (MIR) range detection has increased drastically for practical applications in optical sensing, imaging, and communications. Silicon (Si)-based photonic integrated circuits (PICs) have drawn attraction for such applications with cost-effectiveness, low power co...

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Bibliographic Details
Main Author: Son, Bongkwon
Other Authors: Tan Chuan Seng
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2022
Subjects:
Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/155659
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/155659

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