Formation of germanium (Ge) – based waveguides for infrared application

• المؤلف الرئيسي: Zhong, Jian
• مؤلفون آخرون: Li King Ho Holden
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2021
• الموضوعات: Engineering::Mechanical engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/150361
• المؤسسة: Nanyang Technological University

Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts...