Enhancement of thermoelectric performance for n‑type PbS through synergy of gap state and fermi level pinning

• Main Authors: Luo, Zhong-Zhen, Hao, Shiqiang, Cai, Songting, Bailey, Trevor P., Tan, Gangjian, Luo, Yubo, Spanopoulos, Ioannis, Uher, Ctirad, Wolverton, Chris, Dravid, Vinayak P., Yan, Qingyu, Kanatzidis, Mercouri G.
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials; P-type PBS; Thermodynamic Properties
• Online Access: https://hdl.handle.net/10356/150567
• Institution: Nanyang Technological University

We report that Ga-doped and Ga–In-codoped n-type PbS samples show excellent thermoelectric performance in the intermediate temperature range. First-principles electronic structure calculations reveal that Ga doping can cause Fermi level pinning in PbS by introducing a gap state between the conductio...