Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture

• Main Authors: Zhang, Yiping, Lu, Shunpeng, Qiu, Ying, Wu, Jing, Zhang, Menglong, Luo, Dongxiang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Science::Chemistry; GaN; Light-emitting Diode
• Online Access: https://hdl.handle.net/10356/151061
• Institution: Nanyang Technological University

The recent technological trends toward miniaturization in lighting and display devices are accelerating the requirement for high-performance and small-scale GaN-based light-emitting diodes (LEDs). In this work, the effect of mesa size-reduction in the InGaN/GaN LEDs is systematically investigated in...