Non-diffraction beam for small hotspot in lithography
Improving the resolution of lithography so that more electronic components can be integrated on a smaller chip is what we always strive for. At present, the high resolution photolithography machine in the market is mainly EUV, but only ASML can make it at present, and it has a very high requirement...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis-Master by Coursework |
| Language: | English |
| Published: |
Nanyang Technological University
2021
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/151185 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Improving the resolution of lithography so that more electronic components can be integrated on a smaller chip is what we always strive for. At present, the high resolution photolithography machine in the market is mainly EUV, but only ASML can make it at present, and it has a very high requirement for the precision of the instrument and equipment. In this paper, another method to improve the resolution of the lithography machine is introduced. We expect to take advantage of the properties of non-diffraction beam for high resolution lithography. Since the use of metasurface is limited, what we need to do is to test whether the properties of non-diffraction beam are still applicable to the truncation state. The properties of non-diffraction beam and their applicability to truncation are studied in this paper. |
|---|