Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

• المؤلفون الرئيسيون: Han, Kun, Wu, Liang, Cao, Yu, Wang, Hanyu, Ye, Chen, Huang, Ke, Motapothula, M., Xing, Hongna, Li, Xinghua, Qi, Dong-Chen, Li, Xiao, Wang, Renshaw Xiao
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Science::Physics; Vanadium Dioxide; Metal-insulator Transition
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/151393
• المؤسسة: Nanyang Technological University

Ultrathin freestanding membranes with a pronounced metal–insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice–electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm...