GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands

GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands

Germanium-tin-on-insulator (GSOI) has emerged as a new platform for three-dimensional (3D) photonicintegrated circuits (PICs). We report the first demonstration of GeSn dual-waveband resonant-cavity-enhanced photodetectors (RCE PDs) on GSOI platforms with resonance-enhanced responsivity at both...

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Bibliographic Details
Main Authors: Chen, Qimiao, Wu, Shaoteng, Zhang, Lin, Burt, Daniel, Zhou, Hao, Nam, Donguk, Fan, Weijun, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Germanium-Tin
Photodetector
Semiconductor
Online Access:https://hdl.handle.net/10356/151990
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/151990

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