Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering

• Main Authors: Fiedler, Holger, Leveneur, Jérôme, Mitchell, David R. G., Arulkumaran, Subramaniam, Ng, Geok Ing, Alphones, Arokiaswami, Kennedy, John
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; Aluminum Nitride; Energy Efficiency
• Online Access: https://hdl.handle.net/10356/153531
• Institution: Nanyang Technological University

The piezoelectric modulus of wurtzite aluminum nitride (AlN) is a critical material parameter for electrical components, ultimately contributing to the energy efficiency and achievable bandwidth of modern communication devices. Here, we demonstrate that the introduction of metallic point-defects (Ti...