Highly robust organometallic small-molecule-based nonvolatile resistive memory controlled by a redox-gated switching mechanism

• Main Authors: Li, Yang, Zhu, Xiaolin, Li, Yujia, Zhang, Mayue, Ma, Chunlan, Li, Hua, Lu, Jianmei, Zhang, Qichun
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials; Chemistry; Nonvolatile Memory; Redox; Organometallic Material; Data Storage; Electrical Switching
• Online Access: https://hdl.handle.net/10356/154285
• Institution: Nanyang Technological University

Although organic small-molecule-based memory devices (OSMDs) have been demonstrated to show great potential for the application in next-generation data-storage technology, progress toward their further development has been hugely hindered by the ambiguity of their electrical switching mechanism. Thus, purposely fabricating OSMDs with a definite switching behavior is very urgent. Here, we reported a redox-gated nonvolatile rewritable memory device using an organometallic small molecule as an active material. By introducing the redox-active ferrocene into an organic skeleton, the target small molecule exhibits reliable and robust FLASH-type bistable electrical characteristics with a clear redox-controlled switching mechanism, which leads to low operational voltages, good endurance, and long retention. Our study offers a proof-of-concept strategy to design controllable OSMDs with excellent performances.