Unusually-high growth rate (∼2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply

• المؤلفون الرئيسيون: Wu, Shaoteng, Chen, Qimiao, Zhang, Lin, Dian, Lim Yu, Zhou, Hao, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium-Tin; Semiconductor Nanowire
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154331
• المؤسسة: Nanyang Technological University

Low-dimensional nanostructured semiconductors are becoming the promising materials for the further high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these applications, it requires an efficient methodology to control the dimension of the materials during synthesis proce...