Investigation of electrical noise signal triggered resistive switching and its implications

In this article, the electrical noise signal triggered switching of resistive random access memory (RRAM) device is investigated. As noise is also generated when powering up the light source, such a phenomenon can be easily mistaken as a light-activated event. Thus, it is necessary to conduct a ...

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Main Authors: Sun, Jianxun, Tan, Juan Boon, Chen, Tupei
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2021
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在線閱讀:https://hdl.handle.net/10356/154466
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