Comparative analysis of IGBT parameters variation under different accelerated aging tests

Comparative analysis of IGBT parameters variation under different accelerated aging tests

Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling caused by system load profile and external climatic conditions. As the reliability performance of power semiconductor devices in power converter systems is determined by this temperature stress, acceler...

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Bibliographic Details
Main Authors: Sathik, Mohamed Halick Mohamed, Sundararajan, Prasanth, Sasongko, Firman, Pou, Josep, Natarajan, Sivakumar
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Dc Cycling
Junction Temperature
Online Access:https://hdl.handle.net/10356/154475
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/154475

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