Comparative analysis of IGBT parameters variation under different accelerated aging tests
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling caused by system load profile and external climatic conditions. As the reliability performance of power semiconductor devices in power converter systems is determined by this temperature stress, acceler...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/154475 |
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| Institution: | Nanyang Technological University |
| Language: | English |