Variation tolerant sensing circuits for resistive memory

• 主要作者: Liu, Runbo
• 其他作者: Kim Tae Hyoung
• 格式: Thesis-Master by Coursework
• 語言: English
• 出版: Nanyang Technological University 2022
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/154588

Due to the rapid growing of memory market, many new types of NVMs has been made for different advantages, RRAM is one of them. RRAM has the advantages of simple structure, small cell area, low power consumption, easy equal scale reduction and compatibility with standard CMOS process. There fore,...