Variation tolerant sensing circuits for resistive memory

• المؤلف الرئيسي: Liu, Runbo
• مؤلفون آخرون: Kim Tae Hyoung
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2022
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154588

Due to the rapid growing of memory market, many new types of NVMs has been made for different advantages, RRAM is one of them. RRAM has the advantages of simple structure, small cell area, low power consumption, easy equal scale reduction and compatibility with standard CMOS process. There fore,...