Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping

• Main Authors: Deng, Shuo, Xu, Ran, Li, Min, Li, Lijie, Wang, Zhong Lin, Zhang, Qing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Electric Generator; Electron Pump
• Online Access: https://hdl.handle.net/10356/154720
• Institution: Nanyang Technological University

It has been reported that charges can be pumped out of an intermittently contacted p-n (or Schottky) junction, accompanied with mechanical to electric power conversion [1]. The amount of charge measured in the circuit, however, was observed to be 3–4 orders of magnitudes smaller than the space charg...