Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping

• Main Authors: Deng, Shuo, Xu, Ran, Li, Min, Li, Lijie, Wang, Zhong Lin, Zhang, Qing
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2022
• 主題: Engineering::Electrical and electronic engineering; Electric Generator; Electron Pump
• 在線閱讀: https://hdl.handle.net/10356/154720

It has been reported that charges can be pumped out of an intermittently contacted p-n (or Schottky) junction, accompanied with mechanical to electric power conversion [1]. The amount of charge measured in the circuit, however, was observed to be 3–4 orders of magnitudes smaller than the space charg...