Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency

Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency

We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absor...

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Bibliographic Details
Main Authors: Zheng, Haiyang, Sharma, Vijay Kumar, Tsai, Ping Chieh, Zhang, Yiping, Lu, Shunpeng, Zhang, Xueliang, Tan, Swee Tiam, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Science::Physics
Engineering::Electrical and electronic engineering
Electron Beams
Semiconductors
Online Access:https://hdl.handle.net/10356/154996
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Institution: Nanyang Technological University
Language: English
Description
Summary:We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved a good agreement on the dependence of acceleration voltage and QW number in InGaN/GaN MQW structures between the experimental data and the Monte-Carlo (CASINO) simulations. These findings indicate that CL-based UV generation from carefully engineered III-N MWQ structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200-280 nm) wavelengths.

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