On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

• Main Authors: Zhang, Zi-Hui, Ji, Yun, Liu, Wei, Kyaw, Zabu, Ju, Zhengang, Zhang, Xueliang, Hasanov, Namig, Lu, Shunpeng, Zhang, Yiping, Zhu, Binbin, Volkan Demir, Hilmi, Tan, Swee Tiam, Sun, Xiao Wei
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/104080; http://hdl.handle.net/10220/19493
• 機構: Nanyang Technological University

In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces th...