On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

• Main Authors: Zhang, Zi-Hui, Ji, Yun, Liu, Wei, Kyaw, Zabu, Ju, Zhengang, Zhang, Xueliang, Hasanov, Namig, Lu, Shunpeng, Zhang, Yiping, Zhu, Binbin, Volkan Demir, Hilmi, Tan, Swee Tiam, Sun, Xiao Wei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/104080; http://hdl.handle.net/10220/19493
• Institution: Nanyang Technological University

In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.