Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke

Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-capacity power converters. However, transient imbalance current, during turn-on and -off processes, challenges the safety and stability of parallel SiC MOSFETs. In this paper, considering the impact factors of...

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Bibliographic Details
Main Authors: Zeng, Zheng, Zhang, Xin, Zhang, Zhe
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Online Access:https://hdl.handle.net/10356/155209
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Institution: Nanyang Technological University
Language: English
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