Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-capacity power converters. However, transient imbalance current, during turn-on and -off processes, challenges the safety and stability of parallel SiC MOSFETs. In this paper, considering the impact factors of...
Saved in:
Main Authors: | , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2022
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/155209 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Be the first to leave a comment!