Weak distance dependence of hot-electron-transfer rates at the interface between monolayer MoS₂ and gold
Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge....
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Main Authors: | , , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2022
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/155540 |
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Institution: | Nanyang Technological University |
Language: | English |