Weak distance dependence of hot-electron-transfer rates at the interface between monolayer MoS₂ and gold

Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge....

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Main Authors: Xu, Ce, Yong, Hui Wen, He, Jinlu, Long, Run, Cadore, Alisson R., Paradisanos, Ioannis, Ott, Anna K., Soavi, Giancarlo, Tongay, Sefaattin, Cerullo, Giulio, Ferrari, Andrea C., Prezhdo, Oleg V., Loh, Zhi-Heng
其他作者: School of Physical and Mathematical Sciences
格式: Article
語言:English
出版: 2022
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在線閱讀:https://hdl.handle.net/10356/155540
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機構: Nanyang Technological University
語言: English