Weak distance dependence of hot-electron-transfer rates at the interface between monolayer MoS₂ and gold

• المؤلفون الرئيسيون: Xu, Ce, Yong, Hui Wen, He, Jinlu, Long, Run, Cadore, Alisson R., Paradisanos, Ioannis, Ott, Anna K., Soavi, Giancarlo, Tongay, Sefaattin, Cerullo, Giulio, Ferrari, Andrea C., Prezhdo, Oleg V., Loh, Zhi-Heng
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Science::Chemistry; Charge Transfer; Interfaces
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/155540

Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge....