A 13.5-Gb/s 140-GHz silicon redriver exploiting metadevices for short-range OOK communications
The effort to confine the electromagnetic field by silicon passive metadevices has made the design of an on-chip wideband sub-terahertz (sub-THz) I/O redriver feasible, paving a new way toward energy-efficient and crosstalk-immune ON-OFF keying (OOK) communications. Two metadevices, namely spoof sur...
محفوظ في:
المؤلفون الرئيسيون: | , , , , , |
---|---|
مؤلفون آخرون: | |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2022
|
الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/156844 |
الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
الملخص: | The effort to confine the electromagnetic field by silicon passive metadevices has made the design of an on-chip wideband sub-terahertz (sub-THz) I/O redriver feasible, paving a new way toward energy-efficient and crosstalk-immune ON-OFF keying (OOK) communications. Two metadevices, namely spoof surface plasmon polaritons (SPPs) metawaveguide and split-ring resonator (SRR), are exploited to build the sub-THz low-crosstalk silicon channel and high-ON-OFF-ratio modulator, respectively. A sub-THz signal source combining the merit of spoof SPPs and SRR is introduced. A 140-GHz dual-channel redriver composed of these metadevices is fully integrated in a 65-nm CMOS technology. The redriver realizes both 27-1 and 231-1 13.5 Gb/s/lane for dual-channel OOK modulation. The measured energy efficiency is 2.6 pJ/bit/lane and the bit error rate (BER) is ≤10-12, demonstrating a crosstalk-immune sub-THz I/O system. The power consumption is 35.1 mW/lane and the active area of the redriver is 0.23 mm2. |
---|