Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

• المؤلفون الرئيسيون: Zhang, Yi-Yu, Shin, Sang-Ho, Kang, Hyeok-Joong, Jeon, Sohee, Hwang, Soon Hyoung, Zhou, Weidong, Jeong, Jun-Ho, Li, Xiuling, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Metal-Assisted Chemical Etching; Anti-Reflection
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156876
• المؤسسة: Nanyang Technological University

Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a releasable form (e.g., free-standing PGe) by lithography-free metal-assisted chemical etching (MacEtch) at room temperature under open-circuit. A thin layer of Au is evaporated on the entire surface of c-Ge and Ge on ins...