Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector
Thermal imaging technology is the cornerstone of military and civil technology. Two-color infrared photodetectors working in mid-wavelength infrared (MWIR, 3 μm-5 μm) and long-wavelength infrared (LWIR, 8 μm-12 μm) band receive significant attention. The excellent optoelectronic and physicochemical...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| مؤلفون آخرون: | |
| التنسيق: | Thesis-Master by Coursework |
| اللغة: | English |
| منشور في: |
Nanyang Technological University
2022
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/157569 |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| الملخص: | Thermal imaging technology is the cornerstone of military and civil technology. Two-color infrared photodetectors working in mid-wavelength infrared (MWIR, 3 μm-5 μm) and long-wavelength infrared (LWIR, 8 μm-12 μm) band receive significant attention. The excellent optoelectronic and physicochemical properties make it possible for group-III nitride quantum well to fabricate two-color infrared photodetector. However, the component and well width of group-III nitride that can accomplish the two-color detection have not been investigated. In this case, this project utilizes the 8-band model, firstly calculates the transition energy from E1 to E2 and therefore finds the desired component and well width; secondly, these parameters are optimized according to Q_TE curves and Q_TM curves. Finally, Al0.1Ga0.9N/In0.3Ga0.7N (with well width 31 Å and 60 Å) is determined to be the optimal quantum wells. |
|---|