Robust sensing circuits for resistive memory
With the rapid development of memory, it has entered all aspects of people's life. Based on the development and application of memory, this thesis introduces Flash memory, which is commonly used nowadays, and then introduces RRAM and shows its advantages over Flash. The existing model of RRAM i...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/157743 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | With the rapid development of memory, it has entered all aspects of people's life. Based on the development and application of memory, this thesis introduces Flash memory, which is commonly used nowadays, and then introduces RRAM and shows its advantages over Flash. The existing model of RRAM is described, and its simulation and parametric analysis are carried out. In addition, a robust sensing circuit for RRAM resistance variation is designed, tested and analyzed. At the end, an outlook on the future development trend of RRAM is given.
Keywords: Memories, RRAM, Sensing circuit, Resistance |
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