Robust sensing circuits for resistive memory
With the rapid development of memory, it has entered all aspects of people's life. Based on the development and application of memory, this thesis introduces Flash memory, which is commonly used nowadays, and then introduces RRAM and shows its advantages over Flash. The existing model of RRAM i...
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Nanyang Technological University
2022
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sg-ntu-dr.10356-1577432023-07-04T17:48:48Z Robust sensing circuits for resistive memory Song, Yuewei Kim Tae Hyoung School of Electrical and Electronic Engineering THKIM@ntu.edu.sg Engineering::Electrical and electronic engineering With the rapid development of memory, it has entered all aspects of people's life. Based on the development and application of memory, this thesis introduces Flash memory, which is commonly used nowadays, and then introduces RRAM and shows its advantages over Flash. The existing model of RRAM is described, and its simulation and parametric analysis are carried out. In addition, a robust sensing circuit for RRAM resistance variation is designed, tested and analyzed. At the end, an outlook on the future development trend of RRAM is given. Keywords: Memories, RRAM, Sensing circuit, Resistance Master of Science (Electronics) 2022-05-13T02:23:11Z 2022-05-13T02:23:11Z 2022 Thesis-Master by Coursework Song, Y. (2022). Robust sensing circuits for resistive memory. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157743 https://hdl.handle.net/10356/157743 en application/pdf Nanyang Technological University |
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Singapore Singapore |
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Engineering::Electrical and electronic engineering |
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Engineering::Electrical and electronic engineering Song, Yuewei Robust sensing circuits for resistive memory |
| description |
With the rapid development of memory, it has entered all aspects of people's life. Based on the development and application of memory, this thesis introduces Flash memory, which is commonly used nowadays, and then introduces RRAM and shows its advantages over Flash. The existing model of RRAM is described, and its simulation and parametric analysis are carried out. In addition, a robust sensing circuit for RRAM resistance variation is designed, tested and analyzed. At the end, an outlook on the future development trend of RRAM is given.
Keywords: Memories, RRAM, Sensing circuit, Resistance |
| author2 |
Kim Tae Hyoung |
| author_facet |
Kim Tae Hyoung Song, Yuewei |
| format |
Thesis-Master by Coursework |
| author |
Song, Yuewei |
| author_sort |
Song, Yuewei |
| title |
Robust sensing circuits for resistive memory |
| title_short |
Robust sensing circuits for resistive memory |
| title_full |
Robust sensing circuits for resistive memory |
| title_fullStr |
Robust sensing circuits for resistive memory |
| title_full_unstemmed |
Robust sensing circuits for resistive memory |
| title_sort |
robust sensing circuits for resistive memory |
| publisher |
Nanyang Technological University |
| publishDate |
2022 |
| url |
https://hdl.handle.net/10356/157743 |
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1772827306985783296 |