2D material based high performance photodetectors

• Main Author: Chan, Tuck Yern
• Other Authors: Wang Qijie
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2022
• Subjects: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/157770
• Institution: Nanyang Technological University

With the ever growing intricacy of diverse systems and processes, there is a growing need for advanced and highly efficient physical hardware. Photodetectors are vital and necessary as a component in a large number of devices and processes. Photodetectors are sensors that have the ability to convert photon energy in to electrical energy for usage. They serve as a fundamental piece for products ranging from image sensors, fibre optic communication systems to even radiation detectors. Compared to the different possible materials such as Silicon or Germanium, Graphene has superior optical and electronic properties and thus is deemed as the ideal material for manufacturing high performance and high-functioning photodetectors. The main objective of the project is to fabricate a Graphene based field effect transistor (GrFET) and conduct analysis on photodetection measurements. These studies provide a more in depth analysis and research on the use of Graphene as a sensor since its discovery.