Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices

In power converters, short-circuit faults are the most common cause of failure. Short-Circuit (SC) detection and protection methods have been developed for silicon (Si) devices, such as Si Insulated Gate Bipolar Transistors (IGBT) or Si Metal Oxide Field Effect Transistors (MOSFET). The emergen...

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Bibliographic Details
Main Author: Goh, Sheue Ling
Other Authors: Wong Kin Shun, Terence
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2022
Subjects:
Online Access:https://hdl.handle.net/10356/158097
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Institution: Nanyang Technological University
Language: English
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