Simulation of dopant distribution inside group IV nanowires

• Main Author: Ji, Qiang
• Other Authors: Kantisara Pita
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Computer science and engineering::Computer systems organization::Computer-communication networks
• Online Access: http://hdl.handle.net/10356/15952
• Institution: Nanyang Technological University

This report describes a series of process and device simulation experiments of Group IV silicon nanowires based on Taurus TSUPREM-4. Fabrication process, dopant distribution profile and changing in electrical properties are observed and discussed. The silicon nanowire is a kind of new generation de...