MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness dow...

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Bibliographic Details
Main Authors: Guo, Yuxi, Kang, Lixing, Song, Pin, Zeng, Qingsheng, Tang, Bijun, Yang, Jiefu, Wu, Yao, Tian, Dan, Xu, Manzhang, Zhao, Wu, Qi, Xiaofei, Zhang, Zhiyong, Liu, Zheng
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Engineering::Materials
2D Materials
Chemical Vapor Deposition
Online Access:https://hdl.handle.net/10356/159995
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Institution: Nanyang Technological University
Language: English
Description
Summary:The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.

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