MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

• Main Authors: Guo, Yuxi, Kang, Lixing, Song, Pin, Zeng, Qingsheng, Tang, Bijun, Yang, Jiefu, Wu, Yao, Tian, Dan, Xu, Manzhang, Zhao, Wu, Qi, Xiaofei, Zhang, Zhiyong, Liu, Zheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Materials; 2D Materials; Chemical Vapor Deposition
• Online Access: https://hdl.handle.net/10356/159995
• Institution: Nanyang Technological University

The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.