Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe
A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and...
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Main Authors: | , , , , , |
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其他作者: | |
格式: | Article |
語言: | English |
出版: |
2022
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/162066 |
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機構: | Nanyang Technological University |
語言: | English |