Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and...

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Bibliographic Details
Main Authors: Clark, Oliver J., Wadgaonkar, Indrajit, Freyse, Friedrich, Springholz, Gunther, Battiato, Marco, Sánchez-Barriga, Jaime
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2022
Subjects:
Science::Physics
Ferroelectric Semiconductors
Rashba Effect
Online Access:https://hdl.handle.net/10356/162066
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/162066

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