Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and...

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書目詳細資料
Main Authors:	Clark, Oliver J., Wadgaonkar, Indrajit, Freyse, Friedrich, Springholz, Gunther, Battiato, Marco, Sánchez-Barriga, Jaime
其他作者:	School of Physical and Mathematical Sciences
格式:	Article
語言:	English
出版:	2022
主題:	Science::Physics Ferroelectric Semiconductors Rashba Effect
在線閱讀:	https://hdl.handle.net/10356/162066
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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