Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

• المؤلفون الرئيسيون: Clark, Oliver J., Wadgaonkar, Indrajit, Freyse, Friedrich, Springholz, Gunther, Battiato, Marco, Sánchez-Barriga, Jaime
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Science::Physics; Ferroelectric Semiconductors; Rashba Effect
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/162066

A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and...