Spin reflection-induced field-free magnetization switching in perpendicularly magnetized Mgo/Pt/Co heterostructures
Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through i...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2022
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/162308 |
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Institution: | Nanyang Technological University |
Language: | English |