Spin reflection-induced field-free magnetization switching in perpendicularly magnetized Mgo/Pt/Co heterostructures

Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through i...

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Bibliographic Details
Main Authors: Jin, Tianli, Lim, Gerard Joseph, Poh, Han Yin, Wu, Shuo, Tan, Funan, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2022
Subjects:
Online Access:https://hdl.handle.net/10356/162308
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Institution: Nanyang Technological University
Language: English
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