Investigation of germanium and germanium-tin laser technologies towards electronic-photonic integrated circuits
Since the first electrical integrated circuits (ICs), the level of integration has been increasing with the scaling down of transistors. Although it is possible to integrate a number of transistors in a single chip, however, the ICs suffers from a performance bottleneck. To eliminate the performa...
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Format: | Thesis-Doctor of Philosophy |
Language: | English |
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Nanyang Technological University
2022
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Online Access: | https://hdl.handle.net/10356/162669 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Since the first electrical integrated circuits (ICs), the level of integration has
been increasing with the scaling down of transistors. Although it is possible to integrate
a number of transistors in a single chip, however, the ICs suffers from a performance
bottleneck. To eliminate the performance bottleneck, an on-chip optical interconnect
system has been in the limelight. However, developments in on-chip interconnect
system have been made slow progress due to the absence of efficient on-chip light
sources.
Germanium (Ge) is the promising material for the on-chip optical interconnect
system. However, Ge is not suitable for light sources because of its poor light emission
efficiency. Thus, an efficient light source is the only missing key for the on-chip optical
interconnect system.
Throughout this thesis, we discuss our achievements about the efficient Ge based
light sources, which can pave the way towards the on-chip optical interconnect
system. |
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